1N5407GHB0G Bei (USD) [1146094pcs Hisa]
- 1 pcs$0.03227
- Nambari ya Sehemu:
- 1N5407GHB0G
- Mzalishaji:
- Taiwan Semiconductor Corporation
- Maelezo ya kina:
- DIODE GEN PURP 800V 3A DO201AD.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Viwango - RF, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Arrays and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in Taiwan Semiconductor Corporation 1N5407GHB0G electronic components. 1N5407GHB0G can be shipped within 24 hours after order. If you have any demands for 1N5407GHB0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N5407GHB0G Sifa za Bidhaa
Nambari ya Sehemu :
1N5407GHB0G
Mzalishaji :
Taiwan Semiconductor Corporation
Maelezo :
DIODE GEN PURP 800V 3A DO201AD
Mfululizo :
Automotive, AEC-Q101
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
800V
Sasa - Wastani Aliyerekebishwa (Io) :
3A
Voltage - Mbele (Vf) (Max) @ Kama :
1V @ 3A
Kasi :
Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
-
Sasa - Rejea kuvuja @ Vr :
5µA @ 800V
Uwezo @ Vr, F :
25pF @ 4V, 1MHz
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
DO-201AD, Axial
Kifurushi cha Kifaa cha Mtoaji :
DO-201AD
Joto la Kufanya kazi - Junction :
-55°C ~ 150°C
Habari mpya kabisa
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