Infineon Technologies - IPP60R199CPXKSA1

KEY Part #: K6399349

IPP60R199CPXKSA1 Bei (USD) [22056pcs Hisa]

  • 1 pcs$1.61296
  • 10 pcs$1.44197
  • 100 pcs$1.18240
  • 500 pcs$0.90836
  • 1,000 pcs$0.76608

Nambari ya Sehemu:
IPP60R199CPXKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 650V 16A TO220-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Viwango - Rectifiers - Arrays, Viwango - Zener - Arrays, Moduli za Dereva za Nguvu, Transistors - Kusudi Maalum, Transistors - JFETs, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP60R199CPXKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IPP60R199CPXKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 650V 16A TO220-3
Mfululizo : CoolMOS™
Hali ya Sehemu : Not For New Designs
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 16A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 199 mOhm @ 9.9A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 660µA
Malango ya Lango (Qg) (Max) @ Vgs : 43nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1520pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 139W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO220-3
Kifurushi / Kesi : TO-220-3