Alliance Memory, Inc. - AS4C256M16D3LB-12BIN

KEY Part #: K932914

AS4C256M16D3LB-12BIN Bei (USD) [12547pcs Hisa]

  • 1 pcs$3.65213

Nambari ya Sehemu:
AS4C256M16D3LB-12BIN
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 4G PARALLEL 96FBGA. DRAM 4G, 1.35V, 800Mhz 256M x 16 30nm DDR3
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Chips za IC, PMIC - Uuzaji wa Nishati, Maingiliano - Buffers za Signal, Wanaorudia, Spide, Iliyoingizwa - Microcontroller, Microprocessor, Mo, Maingiliano - Swichi za Analog, Multiplexers, Demu, Kumbukumbu, Mantiki - Multivibrators and Mantiki - Latches ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C256M16D3LB-12BIN electronic components. AS4C256M16D3LB-12BIN can be shipped within 24 hours after order. If you have any demands for AS4C256M16D3LB-12BIN, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C256M16D3LB-12BIN Sifa za Bidhaa

Nambari ya Sehemu : AS4C256M16D3LB-12BIN
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 4G PARALLEL 96FBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR3L
Saizi ya kumbukumbu : 4Gb (256M x 16)
Usafirishaji wa Saa : 800MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 20ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.283V ~ 1.45V
Joto la Kufanya kazi : -40°C ~ 95°C (TC)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 96-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 96-FBGA (13.5x9)