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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  5. W947D2HBJX5E TR

Winbond Electronics - W947D2HBJX5E TR

KEY Part #: K942479

W947D2HBJX5E TR Bei (USD) [47612pcs Hisa]

  • 1 pcs$1.02726
  • 2,500 pcs$1.02215
Nambari ya Sehemu:
W947D2HBJX5E TR
Mzalishaji:
Winbond Electronics
Maelezo ya kina:
IC DRAM 128M PARALLEL 90VFBGA. DRAM 128M mDDR, x32, 200MHz T&R
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maingiliano - Serializer, Deseriizer, Upataji wa Takwimu - Dijiti kwa Analog za Analog (, Upataji wa data - Potentiometers za dijiti, PMIC - Onyesha Madereva, PMIC - V / F na waongofu wa F / V, Kumbukumbu - Batri, PMIC - Watawala wa Nguvu Zaidi ya Ethernet (PoE) and PMIC - PFC (Marekebisho ya Nguvu ya Nguvu) ...
Faida ya Ushindani:
We specialize in Winbond Electronics W947D2HBJX5E TR electronic components. W947D2HBJX5E TR can be shipped within 24 hours after order. If you have any demands for W947D2HBJX5E TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

W947D2HBJX5E TR Sifa za Bidhaa

Nambari ya Sehemu : W947D2HBJX5E TR
Mzalishaji : Winbond Electronics
Maelezo : IC DRAM 128M PARALLEL 90VFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - Mobile LPDDR
Saizi ya kumbukumbu : 128Mb (4M x 32)
Usafirishaji wa Saa : 200MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 5ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.95V
Joto la Kufanya kazi : -25°C ~ 85°C (TC)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 90-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 90-VFBGA (8x13)

Habari mpya kabisa

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