Microsemi Corporation - APT45GP120B2DQ2G

KEY Part #: K6422586

APT45GP120B2DQ2G Bei (USD) [4228pcs Hisa]

  • 1 pcs$10.24356
  • 10 pcs$9.47356
  • 25 pcs$8.70522
  • 100 pcs$7.69608
  • 250 pcs$7.06285

Nambari ya Sehemu:
APT45GP120B2DQ2G
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
IGBT 1200V 113A 625W TMAX.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - JFETs, Transistors - IGBTs - Arrays, Moduli za Dereva za Nguvu, Thyristors - TRIAC, Transistors - FET, MOSFETs - Moja, Viwango - Rectifiers - Arrays and Viwango - Bridge Rectifiers ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT45GP120B2DQ2G Sifa za Bidhaa

Nambari ya Sehemu : APT45GP120B2DQ2G
Mzalishaji : Microsemi Corporation
Maelezo : IGBT 1200V 113A 625W TMAX
Mfululizo : POWER MOS 7®
Hali ya Sehemu : Active
Aina ya IGBT : PT
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 113A
Sasa - Mtoza Ushuru (Icm) : 170A
Vce (on) (Max) @ Vge, Ic : 3.9V @ 15V, 45A
Nguvu - Max : 625W
Kubadilisha Nishati : 900µJ (on), 905µJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 185nC
Td (on / off) @ 25 ° C : 18ns/100ns
Hali ya Uchunguzi : 600V, 45A, 5 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : -
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-247-3 Variant
Kifurushi cha Kifaa cha Mtoaji : -