ON Semiconductor - FQD10N20CTM_F080

KEY Part #: K6407615

[8610pcs Hisa]


    Nambari ya Sehemu:
    FQD10N20CTM_F080
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    MOSFET N-CH 200V 7.8A DPAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Viwango - RF, Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Moja, Transistors - IGBTs - Arrays, Thyristors - TRIAC, Viwango - Rectifiers - Arrays and Thyristors - SCRs - Moduli ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor FQD10N20CTM_F080 electronic components. FQD10N20CTM_F080 can be shipped within 24 hours after order. If you have any demands for FQD10N20CTM_F080, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQD10N20CTM_F080 Sifa za Bidhaa

    Nambari ya Sehemu : FQD10N20CTM_F080
    Mzalishaji : ON Semiconductor
    Maelezo : MOSFET N-CH 200V 7.8A DPAK
    Mfululizo : QFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 200V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 7.8A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 360 mOhm @ 3.9A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 26nC @ 10V
    Vgs (Max) : ±30V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 510pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 50W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : D-Pak
    Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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