2SK2009TE85LF Bei (USD) [498647pcs Hisa]
- 1 pcs$0.07418
- Nambari ya Sehemu:
- 2SK2009TE85LF
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N-CH 30V 0.2A SMINI.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Viwango - Zener - Arrays, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage 2SK2009TE85LF electronic components. 2SK2009TE85LF can be shipped within 24 hours after order. If you have any demands for 2SK2009TE85LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK2009TE85LF Sifa za Bidhaa
Nambari ya Sehemu :
2SK2009TE85LF
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 30V 0.2A SMINI
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
200mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V
Njia ya Kutumia (Max) @ Id, Vgs :
2 Ohm @ 50MA, 2.5V
Vgs (th) (Max) @ Id :
1.5V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
70pF @ 3V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
200mW (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
SC-59-3
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
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