BSC018NE2LSIATMA1 Bei (USD) [159811pcs Hisa]
- 1 pcs$0.23145
- Nambari ya Sehemu:
- BSC018NE2LSIATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 25V 29A TDSON-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Bridge Rectifiers, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moduli, Transistors - IGBTs - Arrays, Thyristors - SCRs - Moduli and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSC018NE2LSIATMA1 electronic components. BSC018NE2LSIATMA1 can be shipped within 24 hours after order. If you have any demands for BSC018NE2LSIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC018NE2LSIATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
BSC018NE2LSIATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 25V 29A TDSON-8
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
25V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
29A (Ta), 100A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2500pF @ 12V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.5W (Ta), 69W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TDSON-8
Kifurushi / Kesi :
8-PowerTDFN
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