IRF1018EPBF Bei (USD) [69274pcs Hisa]
- 1 pcs$0.57280
- 10 pcs$0.50799
- 100 pcs$0.40159
- 500 pcs$0.29460
- 1,000 pcs$0.23258
- Nambari ya Sehemu:
- IRF1018EPBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 60V 79A TO-220AB.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Kusudi Maalum, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Moduli, Transistors - JFETs, Viwango - RF and Transistors - FET, MOSFETs - Moja ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF1018EPBF electronic components. IRF1018EPBF can be shipped within 24 hours after order. If you have any demands for IRF1018EPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF1018EPBF Sifa za Bidhaa
Nambari ya Sehemu :
IRF1018EPBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 60V 79A TO-220AB
Mfululizo :
HEXFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
79A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
8.4 mOhm @ 47A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs :
69nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2290pF @ 50V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
110W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220AB
Kifurushi / Kesi :
TO-220-3
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