Littelfuse Inc. - LSIC1MO120E0120

KEY Part #: K6398296

LSIC1MO120E0120 Bei (USD) [6344pcs Hisa]

  • 1 pcs$6.49592

Nambari ya Sehemu:
LSIC1MO120E0120
Mzalishaji:
Littelfuse Inc.
Maelezo ya kina:
SIC MOSFET 1200V 27A TO247-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - RF, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moduli and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

LSIC1MO120E0120 Sifa za Bidhaa

Nambari ya Sehemu : LSIC1MO120E0120
Mzalishaji : Littelfuse Inc.
Maelezo : SIC MOSFET 1200V 27A TO247-3
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : SiCFET (Silicon Carbide)
Kukata kwa Voltage Voltage (Vdss) : 1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 27A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 20V
Njia ya Kutumia (Max) @ Id, Vgs : 150 mOhm @ 14A, 20V
Vgs (th) (Max) @ Id : 4V @ 7mA
Malango ya Lango (Qg) (Max) @ Vgs : 80nC @ 20V
Vgs (Max) : +22V, -6V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1125pF @ 800V
Makala ya FET : -
Kuondoa Nguvu (Max) : 139W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-247-3
Kifurushi / Kesi : TO-247-3