EPC2101ENGRT Bei (USD) [19588pcs Hisa]
- 1 pcs$2.32586
- 500 pcs$2.31429
- Nambari ya Sehemu:
- EPC2101ENGRT
- Mzalishaji:
- EPC
- Maelezo ya kina:
- GAN TRANS ASYMMETRICAL HALF BRID.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Moja, Transistors - Kusudi Maalum, Thyristors - SCR, Transistors - FET, MOSFETs - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in EPC EPC2101ENGRT electronic components. EPC2101ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2101ENGRT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2101ENGRT Sifa za Bidhaa
Nambari ya Sehemu :
EPC2101ENGRT
Mzalishaji :
EPC
Maelezo :
GAN TRANS ASYMMETRICAL HALF BRID
Mfululizo :
eGaN®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Half Bridge)
Makala ya FET :
GaNFET (Gallium Nitride)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
9.5A, 38A
Njia ya Kutumia (Max) @ Id, Vgs :
11.5 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 2mA
Malango ya Lango (Qg) (Max) @ Vgs :
2.7nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
300pF @ 30V
Nguvu - Max :
-
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
Die
Kifurushi cha Kifaa cha Mtoaji :
Die
Unaweza pia Kuvutiwa Na
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