EPC - EPC2101ENGRT

KEY Part #: K6523299

EPC2101ENGRT Bei (USD) [19588pcs Hisa]

  • 1 pcs$2.32586
  • 500 pcs$2.31429

Nambari ya Sehemu:
EPC2101ENGRT
Mzalishaji:
EPC
Maelezo ya kina:
GAN TRANS ASYMMETRICAL HALF BRID.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Arrays, Transistors - Ushirikiano uliopangwa, Thyristors - SCR, Transistors - IGBTs - Moja, Thyristors - DIAC, SIDAC and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
We specialize in EPC EPC2101ENGRT electronic components. EPC2101ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2101ENGRT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2101ENGRT Sifa za Bidhaa

Nambari ya Sehemu : EPC2101ENGRT
Mzalishaji : EPC
Maelezo : GAN TRANS ASYMMETRICAL HALF BRID
Mfululizo : eGaN®
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Half Bridge)
Makala ya FET : GaNFET (Gallium Nitride)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9.5A, 38A
Njia ya Kutumia (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 2mA
Malango ya Lango (Qg) (Max) @ Vgs : 2.7nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 300pF @ 30V
Nguvu - Max : -
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : Die
Kifurushi cha Kifaa cha Mtoaji : Die
Unaweza pia Kuvutiwa Na
  • SI1539DDL-T1-GE3

    Vishay Siliconix

    MOSFET N/P-CH 30V SC70-6.

  • SM6K2T110

    Rohm Semiconductor

    MOSFET 2N-CH 60V 0.2A SOT-457.

  • ZXMC3AMCTA

    Diodes Incorporated

    MOSFET N/P-CH 30V 2.9A/2.1A 8DFN.

  • AO8804L

    Alpha & Omega Semiconductor Inc.

    MOSFET 2N-CH 20V.

  • SI4288DY-T1-GE3

    Vishay Siliconix

    MOSFET 2N-CH 40V 9.2A 8SO.

  • SH8K32TB1

    Rohm Semiconductor

    MOSFET 2N-CH 60V 4.5A SOP8.