SIHD1K4N60E-GE3 Bei (USD) [70849pcs Hisa]
- 1 pcs$0.55189
- Nambari ya Sehemu:
- SIHD1K4N60E-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH DPAK TO-252.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Arrays, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Moja, Moduli za Dereva za Nguvu and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIHD1K4N60E-GE3 electronic components. SIHD1K4N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHD1K4N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHD1K4N60E-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIHD1K4N60E-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH DPAK TO-252
Mfululizo :
E
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.2A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.45 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
7.5nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
172pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
63W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-252AA
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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