Toshiba Semiconductor and Storage - RN1316,LF

KEY Part #: K6527119

RN1316,LF Bei (USD) [2494569pcs Hisa]

  • 1 pcs$0.01490
  • 3,000 pcs$0.01483
  • 6,000 pcs$0.01337
  • 15,000 pcs$0.01163
  • 30,000 pcs$0.01046
  • 75,000 pcs$0.00930
  • 150,000 pcs$0.00775

Nambari ya Sehemu:
RN1316,LF
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
TRANS PREBIAS NPN 0.1W USM.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Arrays, Transistors - JFETs, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - RF, Moduli za Dereva za Nguvu and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage RN1316,LF electronic components. RN1316,LF can be shipped within 24 hours after order. If you have any demands for RN1316,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1316,LF Sifa za Bidhaa

Nambari ya Sehemu : RN1316,LF
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : TRANS PREBIAS NPN 0.1W USM
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 4.7 kOhms
Upinzani - Base ya Emitter (R2) : 10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : 250MHz
Nguvu - Max : 100mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SC-70, SOT-323
Kifurushi cha Kifaa cha Mtoaji : USM

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