Toshiba Semiconductor and Storage - 2SK879-Y(TE85L,F)

KEY Part #: K6521269

2SK879-Y(TE85L,F) Bei (USD) [663036pcs Hisa]

  • 1 pcs$0.06167
  • 3,000 pcs$0.06137

Nambari ya Sehemu:
2SK879-Y(TE85L,F)
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
JFET N-CH 0.1W USM.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa, Viwango - Zener - Arrays, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - JFETs and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage 2SK879-Y(TE85L,F) electronic components. 2SK879-Y(TE85L,F) can be shipped within 24 hours after order. If you have any demands for 2SK879-Y(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2SK879-Y(TE85L,F) Sifa za Bidhaa

Nambari ya Sehemu : 2SK879-Y(TE85L,F)
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : JFET N-CH 0.1W USM
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Voltage - Kuvunja (V (BR) GSS) : -
Kukata kwa Voltage Voltage (Vdss) : -
Hivi sasa - Drain (Idss) @ Vds (Vgs = 0) : 1.2mA @ 10V
Drain ya Sasa (Id) - Max : -
Voltage - Cutoff (VGS off) @ Id : 400mV @ 100nA
Uingizwaji uwezo (Ciss) (Max) @ Vds : 8.2pF @ 10V
Upinzani - RDS (Imewashwa) : -
Nguvu - Max : 100mW
Joto la Kufanya kazi : 125°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SC-70, SOT-323
Kifurushi cha Kifaa cha Mtoaji : USM

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