Nambari ya Sehemu :
SIZF906DT-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2 N-CH 30V 60A POWERPAIR
Mfululizo :
TrenchFET® Gen IV
Aina ya FET :
2 N-Channel (Dual)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
60A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
22nC @ 4.5V, 92nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2000pF @ 15V, 8200pF @ 15V
Nguvu - Max :
38W (Tc), 83W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TA)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerWDFN
Kifurushi cha Kifaa cha Mtoaji :
8-PowerPair® (6x5)