Vishay Siliconix - SIZF906DT-T1-GE3

KEY Part #: K6523134

SIZF906DT-T1-GE3 Bei (USD) [125990pcs Hisa]

  • 1 pcs$0.29504
  • 3,000 pcs$0.29357

Nambari ya Sehemu:
SIZF906DT-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2 N-CH 30V 60A POWERPAIR.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Viwango - Bridge Rectifiers, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Moja, Thyristors - SCRs - Moduli and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIZF906DT-T1-GE3 electronic components. SIZF906DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF906DT-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIZF906DT-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SIZF906DT-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2 N-CH 30V 60A POWERPAIR
Mfululizo : TrenchFET® Gen IV
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 60A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs : 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 22nC @ 4.5V, 92nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2000pF @ 15V, 8200pF @ 15V
Nguvu - Max : 38W (Tc), 83W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-PowerWDFN
Kifurushi cha Kifaa cha Mtoaji : 8-PowerPair® (6x5)