IXYS - IXFN20N120

KEY Part #: K6403092

IXFN20N120 Bei (USD) [3497pcs Hisa]

  • 1 pcs$13.06939
  • 10 pcs$13.00437

Nambari ya Sehemu:
IXFN20N120
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 1200V 20A SOT-227B.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Thyristors - TRIAC, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Transistors - JFETs, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - RF and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
We specialize in IXYS IXFN20N120 electronic components. IXFN20N120 can be shipped within 24 hours after order. If you have any demands for IXFN20N120, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN20N120 Sifa za Bidhaa

Nambari ya Sehemu : IXFN20N120
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 1200V 20A SOT-227B
Mfululizo : HiPerFET™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 20A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 750 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4.5V @ 8mA
Malango ya Lango (Qg) (Max) @ Vgs : 160nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 7400pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 780W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-227B
Kifurushi / Kesi : SOT-227-4, miniBLOC