ON Semiconductor - FDN357N

KEY Part #: K6396109

FDN357N Bei (USD) [615595pcs Hisa]

  • 1 pcs$0.06038
  • 3,000 pcs$0.06008

Nambari ya Sehemu:
FDN357N
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 30V 1.9A SSOT3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Viwango - Zener - Arrays, Viwango - Bridge Rectifiers, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Moduli za Dereva za Nguvu, Transistors - JFETs, Transistors - Kusudi Maalum and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDN357N electronic components. FDN357N can be shipped within 24 hours after order. If you have any demands for FDN357N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDN357N Sifa za Bidhaa

Nambari ya Sehemu : FDN357N
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 30V 1.9A SSOT3
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1.9A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 60 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 5.9nC @ 5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 235pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 500mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SuperSOT-3
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3