Microsemi Corporation - APT34N80B2C3G

KEY Part #: K6396990

APT34N80B2C3G Bei (USD) [8189pcs Hisa]

  • 1 pcs$5.53519
  • 10 pcs$5.03368
  • 100 pcs$4.27862
  • 500 pcs$3.64940

Nambari ya Sehemu:
APT34N80B2C3G
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
MOSFET N-CH 800V 34A T-MAX.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Arrays, Transistors - Kusudi Maalum, Transistors - IGBTs - Moja, Viwango - Rectifiers - Moja and Transistors - Bipolar (BJT) - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT34N80B2C3G Sifa za Bidhaa

Nambari ya Sehemu : APT34N80B2C3G
Mzalishaji : Microsemi Corporation
Maelezo : MOSFET N-CH 800V 34A T-MAX
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 34A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 145 mOhm @ 22A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 2mA
Malango ya Lango (Qg) (Max) @ Vgs : 355nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4510pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 417W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : T-MAX™ [B2]
Kifurushi / Kesi : TO-247-3 Variant