CSD17579Q3AT Bei (USD) [231947pcs Hisa]
- 1 pcs$0.17092
- 250 pcs$0.17006
- 1,250 pcs$0.09524
- Nambari ya Sehemu:
- CSD17579Q3AT
- Mzalishaji:
- Texas Instruments
- Maelezo ya kina:
- MOSFET N-CH 30V 35A 8VSON.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moja, Moduli za Dereva za Nguvu, Thyristors - TRIAC, Transistors - FET, MOSFETs - RF, Transistors - Kusudi Maalum, Thyristors - DIAC, SIDAC and Transistors - Ushirikiano uliopangwa ...
- Faida ya Ushindani:
- We specialize in Texas Instruments CSD17579Q3AT electronic components. CSD17579Q3AT can be shipped within 24 hours after order. If you have any demands for CSD17579Q3AT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD17579Q3AT Sifa za Bidhaa
Nambari ya Sehemu :
CSD17579Q3AT
Mzalishaji :
Texas Instruments
Maelezo :
MOSFET N-CH 30V 35A 8VSON
Mfululizo :
NexFET™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
20A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
10.2 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
1.9V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
998pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3.2W (Ta), 29W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-VSONP (3x3.15)
Kifurushi / Kesi :
8-PowerVDFN
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