Vishay Semiconductor Diodes Division - 3N257-E4/51

KEY Part #: K6541813

3N257-E4/51 Bei (USD) [4064pcs Hisa]

  • 1 pcs$0.29267
  • 10 pcs$0.25589
  • 25 pcs$0.24062
  • 100 pcs$0.19633
  • 250 pcs$0.18236
  • 500 pcs$0.15519
  • 1,000 pcs$0.12416

Nambari ya Sehemu:
3N257-E4/51
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
BRIDGE RECT 1PHASE 600V 2A KBPM.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Ushirikiano uliopangwa, Thyristors - TRIAC, Transistors - FET, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division 3N257-E4/51 electronic components. 3N257-E4/51 can be shipped within 24 hours after order. If you have any demands for 3N257-E4/51, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

3N257-E4/51 Sifa za Bidhaa

Nambari ya Sehemu : 3N257-E4/51
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : BRIDGE RECT 1PHASE 600V 2A KBPM
Mfululizo : -
Hali ya Sehemu : Obsolete
Aina ya Diode : Single Phase
Teknolojia : Standard
Voltage - Rejea ya kilele (Max) : 600V
Sasa - Wastani Aliyerekebishwa (Io) : 2A
Voltage - Mbele (Vf) (Max) @ Kama : 1.1V @ 3.14A
Sasa - Rejea kuvuja @ Vr : 5µA @ 600V
Joto la Kufanya kazi : -55°C ~ 165°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : 4-SIP, KBPM
Kifurushi cha Kifaa cha Mtoaji : KBPM

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