IPW60R090CFD7XKSA1 Bei (USD) [11588pcs Hisa]
- 1 pcs$3.55645
- Nambari ya Sehemu:
- IPW60R090CFD7XKSA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- HIGH POWERNEW.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moja, Moduli za Dereva za Nguvu and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPW60R090CFD7XKSA1 electronic components. IPW60R090CFD7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPW60R090CFD7XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPW60R090CFD7XKSA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPW60R090CFD7XKSA1
Mzalishaji :
Infineon Technologies
Maelezo :
HIGH POWERNEW
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
25A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
90 mOhm @ 11.4A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 570µA
Malango ya Lango (Qg) (Max) @ Vgs :
51nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2103pF @ 400V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
125W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO247-3
Kifurushi / Kesi :
TO-247-3
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