Vishay Semiconductor Diodes Division - VS-HFA08TB120-N3

KEY Part #: K6442675

VS-HFA08TB120-N3 Bei (USD) [7405pcs Hisa]

  • 1,000 pcs$1.00470

Nambari ya Sehemu:
VS-HFA08TB120-N3
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 1.2KV 8A TO220AC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - RF, Viwango - Rectifiers - Arrays, Transistors - JFETs, Thyristors - SCR, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Moja and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division VS-HFA08TB120-N3 electronic components. VS-HFA08TB120-N3 can be shipped within 24 hours after order. If you have any demands for VS-HFA08TB120-N3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-HFA08TB120-N3 Sifa za Bidhaa

Nambari ya Sehemu : VS-HFA08TB120-N3
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 1.2KV 8A TO220AC
Mfululizo : HEXFRED®
Hali ya Sehemu : Obsolete
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 1200V
Sasa - Wastani Aliyerekebishwa (Io) : 8A
Voltage - Mbele (Vf) (Max) @ Kama : 3.3V @ 8A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 95ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 1200V
Uwezo @ Vr, F : -
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-220-2
Kifurushi cha Kifaa cha Mtoaji : TO-220AC
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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