Vishay Semiconductor Diodes Division - RS3J-E3/9AT

KEY Part #: K6450494

RS3J-E3/9AT Bei (USD) [415538pcs Hisa]

  • 1 pcs$0.09393
  • 3,500 pcs$0.09346
  • 7,000 pcs$0.08743
  • 10,500 pcs$0.08140
  • 24,500 pcs$0.08040

Nambari ya Sehemu:
RS3J-E3/9AT
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 600V 3A DO214AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Thyristors - SCRs - Moduli, Transistors - FET, MOSFETs - Moja, Moduli za Dereva za Nguvu, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - TRIAC, Transistors - IGBTs - Moja and Transistors - JFETs ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division RS3J-E3/9AT electronic components. RS3J-E3/9AT can be shipped within 24 hours after order. If you have any demands for RS3J-E3/9AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS3J-E3/9AT Sifa za Bidhaa

Nambari ya Sehemu : RS3J-E3/9AT
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 600V 3A DO214AB
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Sasa - Wastani Aliyerekebishwa (Io) : 3A
Voltage - Mbele (Vf) (Max) @ Kama : 1.3V @ 2.5A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 250ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 600V
Uwezo @ Vr, F : 34pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AB, SMC
Kifurushi cha Kifaa cha Mtoaji : DO-214AB (SMC)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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