Nambari ya Sehemu :
H11G45
Mzalishaji :
ON Semiconductor
Maelezo :
OPTOISO 4KV DARL W/BASE 6DIP
Hali ya Sehemu :
Obsolete
Voltage - Kutengwa :
4000Vrms
Kiwango cha Uhamisho cha Sasa (Min) :
250% @ 1mA
Kiwango cha Uhamisho cha Sasa (Max) :
-
Washa / Zima wakati (Aina) :
5µs, 150µs
Wakati wa kupanda / Kuanguka (Aina) :
-
Aina ya Pato :
Darlington with Base
Voltage - Pato (Max) :
55V
Sasa - Pato / Channel :
100mA
Voltage - Mbele (Vf) (Aina) :
11V
Sasa - DC Mbele (If) (Max) :
60mA
Joto la Kufanya kazi :
-55°C ~ 100°C
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
6-DIP (0.300", 7.62mm)
Kifurushi cha Kifaa cha Mtoaji :
6-DIP