NSBC123JPDP6T5G Bei (USD) [1565997pcs Hisa]
- 1 pcs$0.02362
- 16,000 pcs$0.02100
- Nambari ya Sehemu:
- NSBC123JPDP6T5G
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- TRANS 2NPN PREBIAS 0.339W SOT963.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Viwango - Zener - Moja, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moduli, Moduli za Dereva za Nguvu and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor NSBC123JPDP6T5G electronic components. NSBC123JPDP6T5G can be shipped within 24 hours after order. If you have any demands for NSBC123JPDP6T5G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSBC123JPDP6T5G Sifa za Bidhaa
Nambari ya Sehemu :
NSBC123JPDP6T5G
Mzalishaji :
ON Semiconductor
Maelezo :
TRANS 2NPN PREBIAS 0.339W SOT963
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
2 NPN - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
2.2 kOhms
Upinzani - Base ya Emitter (R2) :
47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic :
250mV @ 300µA, 10mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
-
Nguvu - Max :
339mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-963
Kifurushi cha Kifaa cha Mtoaji :
SOT-963
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