[12453pcs Hisa]
- Nambari ya Sehemu:
- MT29E1T208ECHBBJ4-3:B
- Mzalishaji:
- Micron Technology Inc.
- Maelezo ya kina:
- IC FLASH 1.125T PARALLEL VBGA.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Kusudi Maalum la Sauti, Kumbukumbu, Maingiliano - Moduli, PMIC - Madereva wa Laser, Maingiliano - Madereva, Wapokeaji, Waendeshaji kup, PMIC - Wasimamizi, PMIC - Madereva ya LED and PMIC - Uuzaji wa Nishati ...
- Faida ya Ushindani:
- We specialize in Micron Technology Inc. MT29E1T208ECHBBJ4-3:B electronic components. MT29E1T208ECHBBJ4-3:B can be shipped within 24 hours after order. If you have any demands for MT29E1T208ECHBBJ4-3:B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MT29E1T208ECHBBJ4-3:B Sifa za Bidhaa
Nambari ya Sehemu :
MT29E1T208ECHBBJ4-3:B
Mzalishaji :
Micron Technology Inc.
Maelezo :
IC FLASH 1.125T PARALLEL VBGA
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya kumbukumbu :
Non-Volatile
Fomati ya kumbukumbu :
FLASH
Teknolojia :
FLASH - NAND
Saizi ya kumbukumbu :
1.125Tb (144G x 8)
Usafirishaji wa Saa :
-
Andika Wakati wa Msaada - Neno, Ukurasa :
-
Wakati wa Upataji :
-
Maingiliano ya kumbukumbu :
Parallel
Voltage - Ugavi :
2.5V ~ 3.6V
Joto la Kufanya kazi :
0°C ~ 70°C (TA)
Aina ya Kuinua :
-
Kifurushi / Kesi :
-
Kifurushi cha Kifaa cha Mtoaji :
-
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
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ISSI, Integrated Silicon Solution Inc
IC SRAM 18M PARALLEL 165PBGA. SRAM 18M (512Kx36) 250MHz Sync SRAM 3.3v
-
-
-
MT41K512M16HA-107 IT:A
Micron Technology Inc.
IC DRAM 8G PARALLEL 933MHZ. DRAM 8G - monolithic die 512M x 16 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Industrial (-40 95 C) 96-ball FBGA
-
-
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