Nambari ya Sehemu :
VS-GB100TH120U
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
IGBT 1200V 200A 1136W INT-A-PAK
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
200A
Vce (on) (Max) @ Vge, Ic :
3.6V @ 15V, 100A
Sasa - Ushuru Mtoaji :
5mA
Uingilivu Ufungaji (Wakuu) @ Vce :
8.45nF @ 20V
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
Double INT-A-PAK (3 + 4)
Kifurushi cha Kifaa cha Mtoaji :
Double INT-A-PAK