Nambari ya Sehemu :
IPD65R380C6BTMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 650V 10.6A TO252-3
Hali ya Sehemu :
Not For New Designs
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
380 mOhm @ 3.2A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 320µA
Malango ya Lango (Qg) (Max) @ Vgs :
39nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
710pF @ 100V
Kuondoa Nguvu (Max) :
83W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO252-3
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63