SCTW90N65G2V Bei (USD) [1553pcs Hisa]
- 1 pcs$27.86749
- Nambari ya Sehemu:
- SCTW90N65G2V
- Mzalishaji:
- STMicroelectronics
- Maelezo ya kina:
- SILICON CARBIDE POWER MOSFET 650.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Viwango - Zener - Moja, Viwango - Zener - Arrays, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moduli and Viwango - Rectifiers - Arrays ...
- Faida ya Ushindani:
- We specialize in STMicroelectronics SCTW90N65G2V electronic components. SCTW90N65G2V can be shipped within 24 hours after order. If you have any demands for SCTW90N65G2V, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCTW90N65G2V Sifa za Bidhaa
Nambari ya Sehemu :
SCTW90N65G2V
Mzalishaji :
STMicroelectronics
Maelezo :
SILICON CARBIDE POWER MOSFET 650
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
SiCFET (Silicon Carbide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
90A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
18V
Njia ya Kutumia (Max) @ Id, Vgs :
25 mOhm @ 50A, 18V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
157nC @ 18V
Vgs (Max) :
+22V, -10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3300pF @ 400V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
390W (Tc)
Joto la Kufanya kazi :
-55°C ~ 200°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
HiP247™
Kifurushi / Kesi :
TO-247-3
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