Toshiba Semiconductor and Storage - TK56E12N1,S1X

KEY Part #: K6418530

TK56E12N1,S1X Bei (USD) [67611pcs Hisa]

  • 1 pcs$0.63936
  • 50 pcs$0.63618

Nambari ya Sehemu:
TK56E12N1,S1X
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
MOSFET N CH 120V 56A TO-220.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - Moja, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moduli and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage TK56E12N1,S1X electronic components. TK56E12N1,S1X can be shipped within 24 hours after order. If you have any demands for TK56E12N1,S1X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK56E12N1,S1X Sifa za Bidhaa

Nambari ya Sehemu : TK56E12N1,S1X
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : MOSFET N CH 120V 56A TO-220
Mfululizo : U-MOSVIII-H
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 120V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 56A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 7 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 69nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4200pF @ 60V
Makala ya FET : -
Kuondoa Nguvu (Max) : 168W (Tc)
Joto la Kufanya kazi : 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220
Kifurushi / Kesi : TO-220-3

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