Nambari ya Sehemu :
TK56E12N1,S1X
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N CH 120V 56A TO-220
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
120V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
56A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
7 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
69nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4200pF @ 60V
Kuondoa Nguvu (Max) :
168W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220
Kifurushi / Kesi :
TO-220-3