Vishay Siliconix - SUP60030E-GE3

KEY Part #: K6398829

SUP60030E-GE3 Bei (USD) [26720pcs Hisa]

  • 1 pcs$1.49397
  • 10 pcs$1.33312
  • 100 pcs$1.03710
  • 500 pcs$0.83980
  • 1,000 pcs$0.70826

Nambari ya Sehemu:
SUP60030E-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 80V 120A TO220AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Viwango - Rectifiers - Moja, Transistors - JFETs and Thyristors - SCR ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SUP60030E-GE3 electronic components. SUP60030E-GE3 can be shipped within 24 hours after order. If you have any demands for SUP60030E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUP60030E-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SUP60030E-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 80V 120A TO220AB
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 7.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3.4 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 141nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 7910pF @ 40V
Makala ya FET : -
Kuondoa Nguvu (Max) : 375W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220AB
Kifurushi / Kesi : TO-220-3