IRFD014PBF Bei (USD) [96413pcs Hisa]
- 1 pcs$0.41810
- 10 pcs$0.34567
- 100 pcs$0.26665
- 500 pcs$0.19751
- 1,000 pcs$0.15801
- Nambari ya Sehemu:
- IRFD014PBF
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 60V 1.7A 4-DIP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Thyristors - TRIAC, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Zener - Moja, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix IRFD014PBF electronic components. IRFD014PBF can be shipped within 24 hours after order. If you have any demands for IRFD014PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD014PBF Sifa za Bidhaa
Nambari ya Sehemu :
IRFD014PBF
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 60V 1.7A 4-DIP
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.7A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
200 mOhm @ 1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
310pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1.3W (Ta)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
4-DIP, Hexdip, HVMDIP
Kifurushi / Kesi :
4-DIP (0.300", 7.62mm)
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