Infineon Technologies - SPD15P10PLGBTMA1

KEY Part #: K6419417

SPD15P10PLGBTMA1 Bei (USD) [110816pcs Hisa]

  • 1 pcs$0.33377
  • 2,500 pcs$0.32044

Nambari ya Sehemu:
SPD15P10PLGBTMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET P-CH 100V 15A TO252-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Thyristors - TRIAC, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Moduli and Transistors - Kusudi Maalum ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPD15P10PLGBTMA1 Sifa za Bidhaa

Nambari ya Sehemu : SPD15P10PLGBTMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET P-CH 100V 15A TO252-3
Mfululizo : SIPMOS®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 15A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 200 mOhm @ 11.3A, 10V
Vgs (th) (Max) @ Id : 2V @ 1.54mA
Malango ya Lango (Qg) (Max) @ Vgs : 62nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1490pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 128W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO252-3
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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