Nambari ya Sehemu :
IPD90N10S406ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH TO252-3
Mfululizo :
Automotive, AEC-Q101, OptiMOS™
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
90A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
6.7 mOhm @ 90A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 90µA
Malango ya Lango (Qg) (Max) @ Vgs :
68nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4870pF @ 25V
Kuondoa Nguvu (Max) :
136W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO252-3-313
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63