Nambari ya Sehemu :
RN1131MFV(TL3,T)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS PREBIAS NPN 0.15W VESM
Aina ya Transistor :
NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
100 kOhms
Upinzani - Base ya Emitter (R2) :
-
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Sasa - Ushuru Mtoaji :
100nA (ICBO)
Mara kwa mara - Mpito :
-
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-723
Kifurushi cha Kifaa cha Mtoaji :
VESM