Nambari ya Sehemu :
TPC8062-H,LQ(CM
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 30V 18A 8SOP
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
18A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
5.8 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 300µA
Malango ya Lango (Qg) (Max) @ Vgs :
34nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2900pF @ 10V
Kuondoa Nguvu (Max) :
1W (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SOP
Kifurushi / Kesi :
8-SOIC (0.173", 4.40mm Width)