Vishay Semiconductor Diodes Division - BYG23T-M3/TR

KEY Part #: K6457002

BYG23T-M3/TR Bei (USD) [519967pcs Hisa]

  • 1 pcs$0.07113
  • 1,800 pcs$0.06623
  • 3,600 pcs$0.06071
  • 5,400 pcs$0.05703
  • 12,600 pcs$0.05335

Nambari ya Sehemu:
BYG23T-M3/TR
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE AVALANCHE 1300V 1A DO214AC. Rectifiers 1A 1300V High Volt Ultrafast
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Moja, Viwango - Bridge Rectifiers, Thyristors - SCRs - Moduli, Viwango - Zener - Moja and Viwango - RF ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division BYG23T-M3/TR electronic components. BYG23T-M3/TR can be shipped within 24 hours after order. If you have any demands for BYG23T-M3/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG23T-M3/TR Sifa za Bidhaa

Nambari ya Sehemu : BYG23T-M3/TR
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE AVALANCHE 1300V 1A DO214AC
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Avalanche
Voltage - DC Reverse (Vr) (Max) : 1300V
Sasa - Wastani Aliyerekebishwa (Io) : 1A (DC)
Voltage - Mbele (Vf) (Max) @ Kama : 1.9V @ 1A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 75ns
Sasa - Rejea kuvuja @ Vr : 5µA @ 1300V
Uwezo @ Vr, F : 9pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AC, SMA
Kifurushi cha Kifaa cha Mtoaji : DO-214AC (SMA)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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