Microsemi Corporation - APT25GP120BDQ1G

KEY Part #: K6422547

APT25GP120BDQ1G Bei (USD) [6830pcs Hisa]

  • 1 pcs$6.03318
  • 10 pcs$5.48451
  • 25 pcs$5.07316
  • 100 pcs$4.66186
  • 250 pcs$4.25050
  • 500 pcs$3.97628

Nambari ya Sehemu:
APT25GP120BDQ1G
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
IGBT 1200V 69A 417W TO247.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - RF, Viwango - Zener - Moja, Viwango - Zener - Arrays, Transistors - IGBTs - Moja, Transistors - Kusudi Maalum and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT25GP120BDQ1G Sifa za Bidhaa

Nambari ya Sehemu : APT25GP120BDQ1G
Mzalishaji : Microsemi Corporation
Maelezo : IGBT 1200V 69A 417W TO247
Mfululizo : POWER MOS 7®
Hali ya Sehemu : Active
Aina ya IGBT : PT
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 69A
Sasa - Mtoza Ushuru (Icm) : 90A
Vce (on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A
Nguvu - Max : 417W
Kubadilisha Nishati : 500µJ (on), 440µJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 110nC
Td (on / off) @ 25 ° C : 12ns/70ns
Hali ya Uchunguzi : 600V, 25A, 5 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : -
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-247-3
Kifurushi cha Kifaa cha Mtoaji : TO-247 [B]