Vishay Siliconix - SIA911EDJ-T1-GE3

KEY Part #: K6524232

[3900pcs Hisa]


    Nambari ya Sehemu:
    SIA911EDJ-T1-GE3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET 2P-CH 20V 4.5A SC70-6.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Moduli za Dereva za Nguvu, Viwango - Rectifiers - Moja, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moja, Viwango - Rectifiers - Arrays and Viwango - Zener - Arrays ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SIA911EDJ-T1-GE3 electronic components. SIA911EDJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA911EDJ-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIA911EDJ-T1-GE3 Sifa za Bidhaa

    Nambari ya Sehemu : SIA911EDJ-T1-GE3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET 2P-CH 20V 4.5A SC70-6
    Mfululizo : TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 P-Channel (Dual)
    Makala ya FET : Logic Level Gate
    Kukata kwa Voltage Voltage (Vdss) : 20V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.5A
    Njia ya Kutumia (Max) @ Id, Vgs : 101 mOhm @ 2.7A, 4.5V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 11nC @ 8V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : -
    Nguvu - Max : 7.8W
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : PowerPAK® SC-70-6 Dual
    Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SC-70-6 Dual

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