Infineon Technologies - SPD50P03LGBTMA1

KEY Part #: K6419205

SPD50P03LGBTMA1 Bei (USD) [97066pcs Hisa]

  • 1 pcs$0.40283

Nambari ya Sehemu:
SPD50P03LGBTMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET P-CH 30V 50A TO-252.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moduli and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPD50P03LGBTMA1 Sifa za Bidhaa

Nambari ya Sehemu : SPD50P03LGBTMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET P-CH 30V 50A TO-252
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 50A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 7 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 126nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 6880pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 150W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO252-5
Kifurushi / Kesi : TO-252-5, DPak (4 Leads + Tab), TO-252AD