Vishay Siliconix - SI7882DP-T1-GE3

KEY Part #: K6407821

[840pcs Hisa]


    Nambari ya Sehemu:
    SI7882DP-T1-GE3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET N-CH 12V 13A PPAK SO-8.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - Bipolar (BJT) - RF, Viwango - RF, Thyristors - SCRs - Moduli, Transistors - JFETs, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - IGBTs - Arrays ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SI7882DP-T1-GE3 electronic components. SI7882DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7882DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI7882DP-T1-GE3 Sifa za Bidhaa

    Nambari ya Sehemu : SI7882DP-T1-GE3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET N-CH 12V 13A PPAK SO-8
    Mfululizo : TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 12V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 13A (Ta)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 4.5V
    Njia ya Kutumia (Max) @ Id, Vgs : 5.5 mOhm @ 17A, 4.5V
    Vgs (th) (Max) @ Id : 1.4V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 30nC @ 4.5V
    Vgs (Max) : ±8V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : -
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 1.9W (Ta)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SO-8
    Kifurushi / Kesi : PowerPAK® SO-8

    Unaweza pia Kuvutiwa Na