Vishay Siliconix - SQJ962EP-T1-GE3

KEY Part #: K6523759

[4664pcs Hisa]


    Nambari ya Sehemu:
    SQJ962EP-T1-GE3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET 2N-CH 60V 8A 8SO.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Zener - Moja, Transistors - JFETs, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - RF, Transistors - Ushirikiano uliopangwa, Thyristors - TRIAC and Viwango - Rectifiers - Moja ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SQJ962EP-T1-GE3 electronic components. SQJ962EP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SQJ962EP-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SQJ962EP-T1-GE3 Sifa za Bidhaa

    Nambari ya Sehemu : SQJ962EP-T1-GE3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET 2N-CH 60V 8A 8SO
    Mfululizo : Automotive, AEC-Q101, TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 N-Channel (Dual)
    Makala ya FET : Logic Level Gate
    Kukata kwa Voltage Voltage (Vdss) : 60V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 8A
    Njia ya Kutumia (Max) @ Id, Vgs : 60 mOhm @ 4.3A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 14nC @ 10V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 475pF @ 25V
    Nguvu - Max : 25W
    Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : PowerPAK® SO-8 Dual
    Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SO-8 Dual

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