Infineon Technologies - IPB60R380C6ATMA1

KEY Part #: K6419121

IPB60R380C6ATMA1 Bei (USD) [92525pcs Hisa]

  • 1 pcs$0.42259

Nambari ya Sehemu:
IPB60R380C6ATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 600V 10.6A TO263.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Bridge Rectifiers, Transistors - JFETs, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Viwango - Zener - Moja, Thyristors - SCR and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB60R380C6ATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPB60R380C6ATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 600V 10.6A TO263
Mfululizo : CoolMOS™
Hali ya Sehemu : Not For New Designs
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 10.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 380 mOhm @ 3.8A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 320µA
Malango ya Lango (Qg) (Max) @ Vgs : 32nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 700pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 83W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D²PAK (TO-263AB)
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB