IXFA10N80P Bei (USD) [36780pcs Hisa]
- 1 pcs$1.23871
- 50 pcs$1.23255
- Nambari ya Sehemu:
- IXFA10N80P
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 800V 10A TO-263.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moduli, Viwango - Rectifiers - Moja, Thyristors - SCRs - Moduli, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika and Viwango - Rectifiers - Arrays ...
- Faida ya Ushindani:
- We specialize in IXYS IXFA10N80P electronic components. IXFA10N80P can be shipped within 24 hours after order. If you have any demands for IXFA10N80P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFA10N80P Sifa za Bidhaa
Nambari ya Sehemu :
IXFA10N80P
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 800V 10A TO-263
Mfululizo :
HiPerFET™, PolarHT™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.1 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 2.5mA
Malango ya Lango (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2050pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
300W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-263 (IXFA)
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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