SISH410DN-T1-GE3 Bei (USD) [183360pcs Hisa]
- 1 pcs$0.20172
- Nambari ya Sehemu:
- SISH410DN-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CHAN PPAK 1212-8SH.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moja, Viwango - Rectifiers - Moja, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - TRIAC and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SISH410DN-T1-GE3 electronic components. SISH410DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH410DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISH410DN-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SISH410DN-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CHAN PPAK 1212-8SH
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
22A (Ta), 35A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
4.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1600pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3.8W (Ta), 52W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® 1212-8SH
Kifurushi / Kesi :
PowerPAK® 1212-8SH
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