Nambari ya Sehemu :
TSM60N1R4CH C5G
Mzalishaji :
Taiwan Semiconductor Corporation
Maelezo :
MOSFET N-CH 600V 3.3A TO251
Hali ya Sehemu :
Not For New Designs
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3.3A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.4 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
7.7nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
370pF @ 100V
Kuondoa Nguvu (Max) :
38W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-251 (IPAK)
Kifurushi / Kesi :
TO-251-3 Short Leads, IPak, TO-251AA