Toshiba Semiconductor and Storage - RN2111ACT(TPL3)

KEY Part #: K6528245

RN2111ACT(TPL3) Bei (USD) [1795726pcs Hisa]

  • 1 pcs$0.02070
  • 10,000 pcs$0.02060

Nambari ya Sehemu:
RN2111ACT(TPL3)
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
TRANS PREBIAS PNP 0.1W CST3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Thyristors - SCR, Transistors - Bipolar (BJT) - RF, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - TRIAC, Transistors - IGBTs - Moduli and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage RN2111ACT(TPL3) electronic components. RN2111ACT(TPL3) can be shipped within 24 hours after order. If you have any demands for RN2111ACT(TPL3), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2111ACT(TPL3) Sifa za Bidhaa

Nambari ya Sehemu : RN2111ACT(TPL3)
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : TRANS PREBIAS PNP 0.1W CST3
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 80mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 10 kOhms
Upinzani - Base ya Emitter (R2) : -
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
Sasa - Ushuru Mtoaji : 100nA (ICBO)
Mara kwa mara - Mpito : -
Nguvu - Max : 100mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SC-101, SOT-883
Kifurushi cha Kifaa cha Mtoaji : CST3

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