ON Semiconductor - NVD5806NT4G

KEY Part #: K6420198

[303312pcs Hisa]


    Nambari ya Sehemu:
    NVD5806NT4G
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    MOSFET N-CH 40V DPAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Moja, Thyristors - SCRs - Moduli, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - TRIAC, Viwango - Zener - Moja and Transistors - JFETs ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor NVD5806NT4G electronic components. NVD5806NT4G can be shipped within 24 hours after order. If you have any demands for NVD5806NT4G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NVD5806NT4G Sifa za Bidhaa

    Nambari ya Sehemu : NVD5806NT4G
    Mzalishaji : ON Semiconductor
    Maelezo : MOSFET N-CH 40V DPAK
    Mfululizo : -
    Hali ya Sehemu : Active
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 40V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 33A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 19 mOhm @ 15A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 38nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 860pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 40W (Tc)
    Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : DPAK
    Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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