Toshiba Memory America, Inc. - TC58BVG1S3HBAI4

KEY Part #: K938201

TC58BVG1S3HBAI4 Bei (USD) [19544pcs Hisa]

  • 1 pcs$2.34452

Nambari ya Sehemu:
TC58BVG1S3HBAI4
Mzalishaji:
Toshiba Memory America, Inc.
Maelezo ya kina:
2GB SLC BENAND 24NM BGA 9X11 EE. NAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM)
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maelewano - Sensor, Kugusa uwezo, Maingiliano - I / O Wapanuaji, Maingiliano - Mabadiliko ya Analog - Kusudi Maalum, Iliyoingizwa - FPGAs (Ardhi inayopangwa kwa Mlango, Saa / Saa - Jenereta za Clock, PLL, Synthesizer za, PMIC - Madereva ya LED, Iliyoingizwa - PLDs (Kifaa cha mantiki cha Mpangil and Iliyoingizwa - Microcontrollers ...
Faida ya Ushindani:
We specialize in Toshiba Memory America, Inc. TC58BVG1S3HBAI4 electronic components. TC58BVG1S3HBAI4 can be shipped within 24 hours after order. If you have any demands for TC58BVG1S3HBAI4, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TC58BVG1S3HBAI4 Sifa za Bidhaa

Nambari ya Sehemu : TC58BVG1S3HBAI4
Mzalishaji : Toshiba Memory America, Inc.
Maelezo : 2GB SLC BENAND 24NM BGA 9X11 EE
Mfululizo : Benand™
Hali ya Sehemu : Active
Aina ya kumbukumbu : Non-Volatile
Fomati ya kumbukumbu : FLASH
Teknolojia : FLASH - NAND (SLC)
Saizi ya kumbukumbu : 2Gb (256M x 8)
Usafirishaji wa Saa : -
Andika Wakati wa Msaada - Neno, Ukurasa : 25ns
Wakati wa Upataji : -
Maingiliano ya kumbukumbu : -
Voltage - Ugavi : 2.7V ~ 3.6V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 63-VFBGA
Kifurushi cha Kifaa cha Mtoaji : 63-TFBGA (9x11)

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