Nambari ya Sehemu :
TK6P65W,RQ
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 650V 5.8A DPAK
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.8A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.05 Ohm @ 2.9A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 180µA
Malango ya Lango (Qg) (Max) @ Vgs :
11nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
390pF @ 300V
Kuondoa Nguvu (Max) :
60W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DPAK
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63